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Title: Method and system for reducing device performance degradation of organic devices

Abstract

Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.

Inventors:
Publication Date:
Research Org.:
SRS (Savannah River Site (SRS), Aiken, SC (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1154657
Patent Number(s):
8,822,984
Application Number:
13/305,201
Assignee:
Savannah River Nuclear Solutions, LLC (Aiken, SC) SRS
DOE Contract Number:
AC09-085R22470
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Teague, Lucile C. Method and system for reducing device performance degradation of organic devices. United States: N. p., 2014. Web.
Teague, Lucile C. Method and system for reducing device performance degradation of organic devices. United States.
Teague, Lucile C. Tue . "Method and system for reducing device performance degradation of organic devices". United States. doi:. https://www.osti.gov/servlets/purl/1154657.
@article{osti_1154657,
title = {Method and system for reducing device performance degradation of organic devices},
author = {Teague, Lucile C.},
abstractNote = {Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Sep 02 00:00:00 EDT 2014},
month = {Tue Sep 02 00:00:00 EDT 2014}
}

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