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Title: Method and system for reducing device performance degradation of organic devices

Abstract

Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.

Inventors:
Publication Date:
Research Org.:
SRS (Savannah River Site (SRS), Aiken, SC (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1154657
Patent Number(s):
8,822,984
Application Number:
13/305,201
Assignee:
Savannah River Nuclear Solutions, LLC (Aiken, SC)
DOE Contract Number:  
AC09-085R22470
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Teague, Lucile C. Method and system for reducing device performance degradation of organic devices. United States: N. p., 2014. Web.
Teague, Lucile C. Method and system for reducing device performance degradation of organic devices. United States.
Teague, Lucile C. Tue . "Method and system for reducing device performance degradation of organic devices". United States. https://www.osti.gov/servlets/purl/1154657.
@article{osti_1154657,
title = {Method and system for reducing device performance degradation of organic devices},
author = {Teague, Lucile C.},
abstractNote = {Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation.},
doi = {},
url = {https://www.osti.gov/biblio/1154657}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {9}
}

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Works referenced in this record:

Dependence of persistent photocurrent on gate bias in inkjet printed organic thin-film transistor
journal, March 2010


Reversible memory effects and acceptor states in pentacene-based organic thin-film transistors
journal, January 2007


Multibit Storage of Organic Thin-Film Field-Effect Transistors
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Organic Polymer Thin-Film Transistor Photosensors
journal, July 2004


Highly sensitive thin-film organic phototransistors: Effect of wavelength of light source on device performance
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Effect of light irradiation on the characteristics of organic field-effect transistors
journal, November 2006


Optical, Fluorescent, and (Photo)conductive Properties of High-Performance Functionalized Pentacene and Anthradithiophene Derivatives
journal, July 2009


Threshold Voltage Tuning of Low-Voltage Organic Thin-Film Transistors
journal, July 2011