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Title: Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode

Abstract

Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

Inventors:
;
Publication Date:
Research Org.:
SNL-A (Sandia National Laboratories, Albuquerque, NM (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1151787
Patent Number(s):
8,814,622
Application Number:
13/298,448
Assignee:
Sandia Corporation (Albuquerque, NM) SNL-A
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Resnick, Paul J., and Langlois, Eric. Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode. United States: N. p., 2014. Web.
Resnick, Paul J., & Langlois, Eric. Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode. United States.
Resnick, Paul J., and Langlois, Eric. Tue . "Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode". United States. doi:. https://www.osti.gov/servlets/purl/1151787.
@article{osti_1151787,
title = {Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode},
author = {Resnick, Paul J. and Langlois, Eric},
abstractNote = {Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 26 00:00:00 EDT 2014},
month = {Tue Aug 26 00:00:00 EDT 2014}
}

Patent:

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Works referenced in this record:

An integrated field emission array for ion desorption
journal, May 2010

  • Resnick, P. J.; Holland, C. E.; Schwoebel, P. R.
  • Microelectronic Engineering, Vol. 87, Issue 5-8, p. 1263-1265
  • DOI: 10.1016/j.mee.2009.11.036