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Title: Absolute Charge Calibration for 3He Preamplifiers

Authors:
 [1]
  1. Los Alamos National Laboratory
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
DOE/LANL
OSTI Identifier:
1150668
Report Number(s):
LA-UR-14-26630
DOE Contract Number:
AC52-06NA25396
Resource Type:
Conference
Resource Relation:
Conference: 17th U.S. – ROK Permanent Coordinating Group Meeting July 28-29 2014, ; 2014-07-29 - 2014-07-29 ; Los Alamos, New Mexico, United States
Country of Publication:
United States
Language:
English
Subject:
Nuclear Disarmament, Safeguards, & Physical Protection(98); chare calibration, He-3 detector, electronics

Citation Formats

Ianakiev, Kiril Dimitrov. Absolute Charge Calibration for 3He Preamplifiers. United States: N. p., 2014. Web.
Ianakiev, Kiril Dimitrov. Absolute Charge Calibration for 3He Preamplifiers. United States.
Ianakiev, Kiril Dimitrov. Thu . "Absolute Charge Calibration for 3He Preamplifiers". United States. doi:. https://www.osti.gov/servlets/purl/1150668.
@article{osti_1150668,
title = {Absolute Charge Calibration for 3He Preamplifiers},
author = {Ianakiev, Kiril Dimitrov},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Aug 21 00:00:00 EDT 2014},
month = {Thu Aug 21 00:00:00 EDT 2014}
}

Conference:
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  • A new type of charge restoration is described for use particularly in germanium gamma-ray spectrometers for accelerator and space physics applications. A bipolar pulsed reset technique is applied to these applications for the first time. This technique overcomes the problems introduced by the need to AC couple detectors and the fact that very large energy depositions occur due to charged particles present in substantial fluxes, particularly in space. The circuit is described and experimental results are presented and discussed.
  • Charge-sensitive preamplifers for operation between 1K and 120K have been developed and evaluated. They use double-gate GaAs MESFETs selected for their low 1/f noise. These devices are operated with both gates interconnected emulating single-gate MESFETs of double gate-length, obtaining in this way a value for A{sub f}, the coefficient of the 1/f noise spectral power density, of 1.7 {times} 10{sup {minus}13}V{sup 2} at 77K and 3.8 {times} 10{sup {minus}14}V{sup 2} at 4K. The latter is one-fourth the value exhibited by the original device before modification and two orders of magnitude less that the value measured at 300K. At the optimummore » bias operating point device trasconductance is 6mA/V and power dissipation 360{mu}W.« less
  • The upcoming E12-14-009 [1] experiment at Jefferson Lab will determine the ratio of the electric form factors for the A=3 mirror nuclei 3He and 3H. The measurement will use a 1.1 GeV electron beam, a special collimator plate to allow for simultaneous optics measurements, and the low-activity tritium target being prepared for Jefferson Lab. By observing the dependence of the form factor ratio as a function of Q2 over 0.05–0.09 GeV2, the dependence of the radii extraction on the shape of the form factors is minimized. As a result, we anticipate the uncertainty of the extracted charge radii difference tomore » be 0.03 fm, a reduction of 70% from the current measurement. Using precise measurements of the 3He charge radius from isotopic shift or μHe measurements [2–4], we can deduce the absolute 3H charge radius. The results will provide a direct comparison to recent calculations of the charge radii.« less