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Title: 15 kV Phase Leg Power Modules with SiC MIDSJT Devices

Authors:
 [1];  [1]
  1. GeneSiC Semiconductor Inc.
Publication Date:
Research Org.:
GeneSiC Semiconductor Inc.
Sponsoring Org.:
USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D) (OE-10)
Contributing Org.:
GeneSiC Semiconductor Inc.
OSTI Identifier:
1150226
Report Number(s):
Final Report DE-SC0008240
DOE Contract Number:  
SC0008240
Type / Phase:
SBIR
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
25 ENERGY STORAGE; Silicon Carbide, Transistor, High Temperature, Monolithic integration, Power Devices, MOSFETs, BJTs

Citation Formats

Sundaresan, Siddarth G, and Singh, Ranbir. 15 kV Phase Leg Power Modules with SiC MIDSJT Devices. United States: N. p., 2014. Web.
Sundaresan, Siddarth G, & Singh, Ranbir. 15 kV Phase Leg Power Modules with SiC MIDSJT Devices. United States.
Sundaresan, Siddarth G, and Singh, Ranbir. Fri . "15 kV Phase Leg Power Modules with SiC MIDSJT Devices". United States. doi:.
@article{osti_1150226,
title = {15 kV Phase Leg Power Modules with SiC MIDSJT Devices},
author = {Sundaresan, Siddarth G and Singh, Ranbir},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Aug 22 00:00:00 EDT 2014},
month = {Fri Aug 22 00:00:00 EDT 2014}
}

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