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Title: Method of fabricating a back-contact solar cell and device thereof

Abstract

Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.

Inventors:
; ;
Publication Date:
Research Org.:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1149917
Patent Number(s):
8,790,957
Application Number:
12/972,247
Assignee:
SunPower Corporation (San Jose, CA) GFO
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Li, Bo, Smith, David, and Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof. United States: N. p., 2014. Web.
Li, Bo, Smith, David, & Cousins, Peter. Method of fabricating a back-contact solar cell and device thereof. United States.
Li, Bo, Smith, David, and Cousins, Peter. Tue . "Method of fabricating a back-contact solar cell and device thereof". United States. doi:. https://www.osti.gov/servlets/purl/1149917.
@article{osti_1149917,
title = {Method of fabricating a back-contact solar cell and device thereof},
author = {Li, Bo and Smith, David and Cousins, Peter},
abstractNote = {Methods of fabricating back-contact solar cells and devices thereof are described. A method of fabricating a back-contact solar cell includes forming an N-type dopant source layer and a P-type dopant source layer above a material layer disposed above a substrate. The N-type dopant source layer is spaced apart from the P-type dopant source layer. The N-type dopant source layer and the P-type dopant source layer are heated. Subsequently, a trench is formed in the material layer, between the N-type and P-type dopant source layers.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 29 00:00:00 EDT 2014},
month = {Tue Jul 29 00:00:00 EDT 2014}
}

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