Direct monolithic integration of vertical single crystalline octahedral molecular sieve nanowires on silicon

Journal Article · Fri Dec 13 00:00:00 EST 2013 · Chemistry of Materials

DOI:https://doi.org/10.1021/cm403064u· OSTI ID:1149772

Carretero-Genevrier, Adrian ^[1]; Oro-Sole, Judith ^[2]; Gazquez, Jaume ^[2]; Magen, Cesar ^[3]; Miranda, Laura ^[4]; Puig, Teresa ^[2]; Obradors, Xavier ^[2]; Ferain, Etienne ^[5]; Sanchez, Clement ^[4]; Rodriguez-Carvajal, Juan ^[6]; Mestres, Narcis ^[2]

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1. Institut des Nanotechnologies de Lyon (INL), UMR-CNRS 5270, Ecole Central de Lyon, Ecully (France); Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France)
2. Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain)
3. Univ. de Zaragoza, Zaragoza (Spain)
4. Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France)
5. Univ. Catholique de Louvain, Louvain-la-Neuve (Belgium)
6. Institut Laue-Langevin, Grenoble Cedex (France)

We developed an original strategy to produce vertical epitaxial single crystalline manganese oxide octahedral molecular sieve (OMS) nanowires with tunable pore sizes and compositions on silicon substrates by using a chemical solution deposition approach. The nanowire growth mechanism involves the use of track-etched nanoporous polymer templates combined with the controlled growth of quartz thin films at the silicon surface, which allowed OMS nanowires to stabilize and crystallize. α-quartz thin films were obtained after thermal activated crystallization of the native amorphous silica surface layer assisted by Sr²⁺- or Ba²⁺-mediated heterogeneous catalysis in the air at 800 °C. These α-quartz thin films work as a selective template for the epitaxial growth of randomly oriented vertical OMS nanowires. Furthermore, the combination of soft chemistry and epitaxial growth opens new opportunities for the effective integration of novel technological functional tunneled complex oxides nanomaterials on Si substrates.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1149772
• Journal Information: Chemistry of Materials, Vol. 26, Issue 2; ISSN 0897-4756
• Publisher: American Chemical Society (ACS)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
epitaxial growth
hollandite
manganese oxides
nanowires
octahedral molecular sieves
oxide nanowires integration
quartz layers
soft chemistry
strontiomelane