skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Improving Modeling of Solar Wind Ion Implantation

Authors:
 [1]
  1. Los Alamos National Laboratory
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
DOE/LANL
OSTI Identifier:
1148307
Report Number(s):
LA-UR-14-25918
DOE Contract Number:
AC52-06NA25396
Resource Type:
Conference
Resource Relation:
Conference: 2014 Student Symposium ; 2014-08-05 - 2014-08-05 ; Los Alamos, New Mexico, United States
Country of Publication:
United States
Language:
English
Subject:
Astronomy & Astrophysics(79); Astronomy and Astrophysics

Citation Formats

Biaou, Carlos K. Improving Modeling of Solar Wind Ion Implantation. United States: N. p., 2014. Web.
Biaou, Carlos K. Improving Modeling of Solar Wind Ion Implantation. United States.
Biaou, Carlos K. Tue . "Improving Modeling of Solar Wind Ion Implantation". United States. doi:. https://www.osti.gov/servlets/purl/1148307.
@article{osti_1148307,
title = {Improving Modeling of Solar Wind Ion Implantation},
author = {Biaou, Carlos K},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 29 00:00:00 EDT 2014},
month = {Tue Jul 29 00:00:00 EDT 2014}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:
  • The high-temperature oxidation behavior of Al, Y and Hf ion-implantation in Ni--25wt%Cr alloy with dosages ranging from 10/sup 15/--10/sup 17/ ionscm/sup 2/ has been studied. Results are compared with the unimplanted alloy, a Xe-implanted alloy and alloys with 0.2wt% Y or 1wt% Al additions. Oxidation tests were carried out at 1000/degree/C and 1100/degree/C in 1 atm. O/sub 2/. It is found that the ion-implantation of Y and Hf greatly reduced oxidation rate and improved scale adherence after a critical implantation dosage, /approximately/1 /times/ 10/sup 16/ ionscm/sup 2/, has been reached. The improved scale adhesion is attributed to both a reductionmore » in growth stress and a strengthened scalealloy interface, which all developed as a result of a modified scale growth process. 8 refs., 6 figs., 1 tab.« less
  • Plasma source ion implantation (PSII) is a highly promising technique for improving the surface characteristics of materials. The use of gas discharges restricts the number of types of ions to which the method can be applied. Greater flexibility will result if metal ion sources can be used to supply the plasma into which the implantation target is immersed. The authors have modeled metal ion PSII in a variety of configurations with an electromagnetic particle-in-cell (PIC) simulation code. Externally injected metal ion plasmas can be operated in at least two modes in conjunction with PSII. The metal ion source can bemore » used to fill the entire discharge chamber with plasma. When the voltage bias needed to implant ions is imposed on the implantation object, the system behaves in a fashion which has been described previously by man researchers. PIC simulations of such metal ion plasmas are completely analogous to those performed on gas ion plasmas. The other mode for PSII operation is to impose the voltage bias at a time shortly after the dense plasma plume created by the metal ion source enters the discharge chamber. For pulsed metal ion sources, this results in completely different dynamics, since the plasmoid may not be electrically connected to the discharge chamber walls. When this plasmoid is subjected to a strong electric field, electrons from the head are repelled and the system becomes polarized. They have followed the evolution of the plasmoid/target system with PIC simulations.« less