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Title: Large hysteretic magneto-resistance in high-mobility semiconductor quantum wired bridged by single-domain nanomagnets.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1147999
Report Number(s):
SAND2007-3276J
523340
DOE Contract Number:
DE-AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Related Information: Proposed for publication in Applied Physics Letters.
Country of Publication:
United States
Language:
English

Citation Formats

Reno, John Louis, Bae, J.U., Lin, T.Y., Yoon, Y., Kim, J., Bird, J. P., IMRE, A., and POROD, W. Large hysteretic magneto-resistance in high-mobility semiconductor quantum wired bridged by single-domain nanomagnets.. United States: N. p., 2007. Web.
Reno, John Louis, Bae, J.U., Lin, T.Y., Yoon, Y., Kim, J., Bird, J. P., IMRE, A., & POROD, W. Large hysteretic magneto-resistance in high-mobility semiconductor quantum wired bridged by single-domain nanomagnets.. United States.
Reno, John Louis, Bae, J.U., Lin, T.Y., Yoon, Y., Kim, J., Bird, J. P., IMRE, A., and POROD, W. Tue . "Large hysteretic magneto-resistance in high-mobility semiconductor quantum wired bridged by single-domain nanomagnets.". United States. doi:.
@article{osti_1147999,
title = {Large hysteretic magneto-resistance in high-mobility semiconductor quantum wired bridged by single-domain nanomagnets.},
author = {Reno, John Louis and Bae, J.U. and Lin, T.Y. and Yoon, Y. and Kim, J. and Bird, J. P. and IMRE, A. and POROD, W.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {Applied Physics Letters},
number = ,
volume = ,
place = {United States},
year = {Tue May 01 00:00:00 EDT 2007},
month = {Tue May 01 00:00:00 EDT 2007}
}
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