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Title: Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films

Abstract

Nanoscale ferroelectrics, the active elements of a variety of nanoelectronic devices, develop denser and richer domain structures than the bulk counterparts. With shrinking device sizes understanding and controlling domain formation in nanoferroelectrics is being intensely studied. Here we show that a precise control of the epitaxy and the strain allows stabilizing a hierarchical domain architecture in PbxSr1-xTiO3 thin films, showing periodic, purely in-plane polarized, ferroelectric nano-domains that can be switched by a scanning probe.

Authors:
 [1];  [2];  [1];  [1];  [3];  [2];  [2];  [1]
  1. University of Groningen, The Netherlands
  2. ORNL
  3. University of Wisconsin, Madison
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1147697
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 5
Country of Publication:
United States
Language:
English
Subject:
PbSrTio3; epitaxial thin films; ferroelectric; nano domains

Citation Formats

Matzen, Sylivia, Nesterov, Okeksiy, Rispens, Gregory, Heuver, J. A., Bark, C, Biegalski, Michael D, Christen, Hans M, and Noheda, Beatriz. Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films. United States: N. p., 2014. Web.
Matzen, Sylivia, Nesterov, Okeksiy, Rispens, Gregory, Heuver, J. A., Bark, C, Biegalski, Michael D, Christen, Hans M, & Noheda, Beatriz. Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films. United States.
Matzen, Sylivia, Nesterov, Okeksiy, Rispens, Gregory, Heuver, J. A., Bark, C, Biegalski, Michael D, Christen, Hans M, and Noheda, Beatriz. 2014. "Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films". United States.
@article{osti_1147697,
title = {Structure and switching of in-plane ferroelectric nano-domains in strained PbxSr1-xTiO3 thin films},
author = {Matzen, Sylivia and Nesterov, Okeksiy and Rispens, Gregory and Heuver, J. A. and Bark, C and Biegalski, Michael D and Christen, Hans M and Noheda, Beatriz},
abstractNote = {Nanoscale ferroelectrics, the active elements of a variety of nanoelectronic devices, develop denser and richer domain structures than the bulk counterparts. With shrinking device sizes understanding and controlling domain formation in nanoferroelectrics is being intensely studied. Here we show that a precise control of the epitaxy and the strain allows stabilizing a hierarchical domain architecture in PbxSr1-xTiO3 thin films, showing periodic, purely in-plane polarized, ferroelectric nano-domains that can be switched by a scanning probe.},
doi = {},
url = {https://www.osti.gov/biblio/1147697}, journal = {Nature Communications},
number = ,
volume = 5,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 2014},
month = {Wed Jan 01 00:00:00 EST 2014}
}