Hyperthermal Pulsed-Laser Ablation Beams for Film Deposition and Surface Microstructural Engineering
This paper presents an overview of pulsed-laser ablation for film deposition and surface microstructure formation. By changing the ambient gas pressure from high vacuum to several Torr (several hundred Pa) and by selecting the pulsed-laser wavelength, the kinetic energy of ablated atoms/ions can be varied from several hundred eV down to {approximately}0.1 eV and films ranging from superhard to nanocrystalline may be deposited. Furthermore, cumulative (multi-pulse) irradiation of a semiconductor surface (e.g. silicon) in an oxidizing gas (0{sub 2}, SF{sub 6}) et atmospheric pressure can produce dense, self-organized arrays of high-aspect-ratio microcolumns or microcones. Thus, a wide range of materials synthesis and processing opportunities result from the hyperthermal flux and reactive growth conditions provided by pulsed-laser ablation.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (US)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 11465
- Report Number(s):
- ORNL/CP-104571; KC 02 02 02 0; KC 02 02 02 0; TRN: AH200128%%766
- Resource Relation:
- Conference: 3rd Symp. on Advanced Photon and Measurement Technologies, Japan, 11/08/1999; Other Information: PBD: 8 Nov 1999
- Country of Publication:
- United States
- Language:
- English
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