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Title: Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted Molecular Beam Epitaxy.

Journal Article · · Journal of Crystal Growth
OSTI ID:1145863

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
DE-AC04-94AL85000
OSTI ID:
1145863
Report Number(s):
SAND2008-2070J; 518930
Journal Information:
Journal of Crystal Growth, Related Information: Proposed for publication in Journal of Crystal Growth.
Country of Publication:
United States
Language:
English