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Title: Ion beam analysis of T and He in tritiated thin films.


Abstract not provided.

; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Report Number(s):
DOE Contract Number:
Resource Type:
Resource Relation:
Conference: Proposed for presentation at the Hydrogen and Helium Isotopes in Materials Conference held February 6-7, 2007 in Albuquerque, NM.
Country of Publication:
United States

Citation Formats

Knapp, James A., Browning, James Frederick, and Snow, Clark Sheldon. Ion beam analysis of T and He in tritiated thin films.. United States: N. p., 2007. Web.
Knapp, James A., Browning, James Frederick, & Snow, Clark Sheldon. Ion beam analysis of T and He in tritiated thin films.. United States.
Knapp, James A., Browning, James Frederick, and Snow, Clark Sheldon. Thu . "Ion beam analysis of T and He in tritiated thin films.". United States. doi:.
title = {Ion beam analysis of T and He in tritiated thin films.},
author = {Knapp, James A. and Browning, James Frederick and Snow, Clark Sheldon},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Feb 01 00:00:00 EST 2007},
month = {Thu Feb 01 00:00:00 EST 2007}

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  • Abstract not provided.
  • A single beam, multiple target (SBMT) deposition system which features a rotating target holder with either elemental or simple compound targets has been developed for the production of layered thin film structures and multicomponent oxide, silicide or other compound thin films. We are employing the SBMT ion beam sputtering system for the deposition of high temperature superconducting films and electro-optical multilayer structures. The beam-target-substrate geometry and ion beam characteristics are designed to minimize beam implantation and secondary sputtering effects, while maintaining high deposition rates. Consequently, the amount of energy which is deposited into the film may be controlled providing enoughmore » energy to promote activated processes, such as the in-situ formation of oriented crystal structures of high temperature superconducting materials, while minimizing amorphization and gas incorporation. All parameters necessary to control the film properties are under computer control. A deposition cycle, defined as a number of sequential steps may be easily modified or added to previously existing deposition cycles, thereby permitting the creation of complicated deposition procedures suitable for he production of films with highly reproducible properties for research purposes, and the in-situ fabrication of complex devices for technological applications. Examples are given of the capabilities of the technique as they apply to the production of high T{sub c} superconducting devices.« less
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  • We report the investigation of ion-beam-induced densification of sol-gel zirconia thin films via in situ ion backscattering spectrometry. We have irradiated three regions of a sample with neon, argon, and krypton ions. For each ion species, a series of irradiation and analysis steps were performed using an interconnected 3 MV tandem accelerator. The technique offers the advantages of minimizing the variation of experimental parameters and sequentially monitoring the densification phenomenon with increasing ion dose.