skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Improved Manufacturability of AlGaAs/GaAs Pnp Heterojunction Bipolar Transistors.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1143322
Report Number(s):
SAND2007-0871C
523937
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 211th Electrochemical Society Meeting held May 6-11, 2007 in Chicago, IL.
Country of Publication:
United States
Language:
English

Citation Formats

Clevenger, Jascinda, Patrizi, Gary A., Peterson, Tracy C., Cich, Michael Joseph, Baca, Albert G., Klem, John Frederick, Plut, Thomas A., Hawkins, Samuel D., Sullivan, Charles T., Fortune, Torben R., Hightower, Michael S., and Torres, David. Improved Manufacturability of AlGaAs/GaAs Pnp Heterojunction Bipolar Transistors.. United States: N. p., 2007. Web.
Clevenger, Jascinda, Patrizi, Gary A., Peterson, Tracy C., Cich, Michael Joseph, Baca, Albert G., Klem, John Frederick, Plut, Thomas A., Hawkins, Samuel D., Sullivan, Charles T., Fortune, Torben R., Hightower, Michael S., & Torres, David. Improved Manufacturability of AlGaAs/GaAs Pnp Heterojunction Bipolar Transistors.. United States.
Clevenger, Jascinda, Patrizi, Gary A., Peterson, Tracy C., Cich, Michael Joseph, Baca, Albert G., Klem, John Frederick, Plut, Thomas A., Hawkins, Samuel D., Sullivan, Charles T., Fortune, Torben R., Hightower, Michael S., and Torres, David. Thu . "Improved Manufacturability of AlGaAs/GaAs Pnp Heterojunction Bipolar Transistors.". United States. doi:. https://www.osti.gov/servlets/purl/1143322.
@article{osti_1143322,
title = {Improved Manufacturability of AlGaAs/GaAs Pnp Heterojunction Bipolar Transistors.},
author = {Clevenger, Jascinda and Patrizi, Gary A. and Peterson, Tracy C. and Cich, Michael Joseph and Baca, Albert G. and Klem, John Frederick and Plut, Thomas A. and Hawkins, Samuel D. and Sullivan, Charles T. and Fortune, Torben R. and Hightower, Michael S. and Torres, David},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Feb 01 00:00:00 EST 2007},
month = {Thu Feb 01 00:00:00 EST 2007}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:
  • No abstract prepared.
  • The authors have demonstrated a functional PnP double heterojunction bipolar transistor (DHBT) using AlGaAs, InGaAsN, and GaAs. The band alignment between InGaAsN and GaAs has a large {triangle}E{sub C} and a negligible {triangle}E{sub V}, and this unique characteristic is very suitable for PnP DHBT applications. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs PnP DHBT is lattice matched to GaAs and has a peak current gain of 25. Because of the smaller bandgap (Eg = 1.20 eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{submore » ON} of 0.79 V, which is 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. And because GaAs is used for the collector, its BV{sub CEO} is 12 V, consistent with BV{sub CEO} of AlGaAs/GaAs HBTs of comparable collector thickness and doping level.« less
  • AlGaAs/GaAs heterojunction bipolar transistors irradiated with 10/sup 15/ neutrons/cm/sup 2/ demonstrated superior performance to silicon bipolar transistors. The post neutron current gain was dominated by recombination in the emitter-base depletion region. The base current exhibited an ideality factor n > 2 after irradiation, which was attributed to two possible recombination mechanisms associated with neutron induced traps: tunneling-assisted trapping and recombination arising from a nonuniform distribution of Shockley-Read-Hall centers within the depletion region. The emitter-base heterojunction was degraded more than the collector-base homojunction after irradiation.
  • This paper reports the effects of neutron irradiation on 3 {mu}m emitter, self-aligned base ohmic metal GaAs/AlGaAs heterojunction bipolar transistors and ICs based on molecular beam epitaxy experimentally and and a low {beta} exhibited higher sensitivity to neutron irradiation than those with low {beta}. At 1.3 {times} 10{sup 14} n/cm{sup 2}, dc {beta} was degraded by 25 percent for high {beta} devices and by 7 percent for low {beta} devices. Parasitic base current components such as the emitter edge recombination seem to be the key factor determining the neutron sensitivity. The functional dependence of {beta} on neutron fluence seems tomore » follow the Messenger-Spratt relation, manifested by a linear increase of the base current with fluence. No deteriorations were seen either in transistor RF characteristic or in digital circuit high speed performance due to neutron irradiation up to a fluence of 1.3 {times} 10{sup 14} n/cm{sup 2}.« less
  • The authors demonstrated a functional PnP double heterojunction bipolar transistor (DHBT) using AlGaAs, InGaAsN, and GaAs. The band alignment between InGaAsN and GaAs has a large {triangle}E{sub c} and negligible {triangle}E{sub v}, this unique characteristic is very suitable for PnP DHBT applications. The metalorganic vapor phase epitaxy (MOCVD) grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}/GaAs PnP DHBT is lattice matched to GaAs and has a peak current gain of 25. Because of the smaller bandgap (E{sub g}=1.20eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, whichmore » is 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. And because GaAs is used for the collector, its BV{sub CEO} is 12 V, consistent with BV{sub CEO} of AlGaAs/GaAs HBTs.« less