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Title: A Framework to Quantify FPGA Design Hardness Against Radiation-Induced Single Event Effects.


Abstract not provided.

Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
Report Number(s):
DOE Contract Number:
Resource Type:
Resource Relation:
Conference: Proposed for presentation at the Midwest Symposium on Circuits and Systems held August 3-6, 2014 in College Station, TX.
Country of Publication:
United States

Citation Formats

Lee, David S., and Draper, Jeffrey. A Framework to Quantify FPGA Design Hardness Against Radiation-Induced Single Event Effects.. United States: N. p., 2014. Web. doi:10.1109/MWSCAS.2014.6908412.
Lee, David S., & Draper, Jeffrey. A Framework to Quantify FPGA Design Hardness Against Radiation-Induced Single Event Effects.. United States. doi:10.1109/MWSCAS.2014.6908412.
Lee, David S., and Draper, Jeffrey. Sat . "A Framework to Quantify FPGA Design Hardness Against Radiation-Induced Single Event Effects.". United States. doi:10.1109/MWSCAS.2014.6908412.
title = {A Framework to Quantify FPGA Design Hardness Against Radiation-Induced Single Event Effects.},
author = {Lee, David S. and Draper, Jeffrey},
abstractNote = {Abstract not provided.},
doi = {10.1109/MWSCAS.2014.6908412},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Mar 01 00:00:00 EST 2014},
month = {Sat Mar 01 00:00:00 EST 2014}

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  • The effect of total dose on SEU hardness is investigated as a function of temperature and power supply voltage to determine worst case hardness assurance test conditions for space environments. SRAMs from six different vendors were characterized for single-event upset (SEU) hardness at proton energies from 20 to 500 MeV and at temperatures of 25 and 80 C after total dose irradiating the SRAMs with either protons, Co-60 gamma rays, or low-energy x-rays. It is shown that total dose irradiation and the bias configuration during total dose irradiation and SEU characterization can substantially affect SEU hardness for some SRAMs. Formore » one SRAM, the bias configuration made more than two orders of magnitude difference in SEU cross section at the highest total dose level examined. In addition, it is shown that increasing the temperature during SEU characterization can also increase the effect of total dose on SEU hardness. As a result, worst-case SEU hardness assurance test conditions are the maximum total dose and temperature of the system environment, and the minimum operating voltage of the SRAM. In contrast to previous works, our results using selective area x-ray irradiations show that the source of the effect of total dose on SEU hardness is radiation-induced leakage currents in the memory cells. The increase in SEU cross section with total dose appears to be consistent with radiation-induced currents originating in the memory cells affecting the output bias levels of bias level shift circuitry used to control the voltage levels to the memory cells and/or due to the lowering of the noise margin of individual memory cells caused by radiation-induced leakage currents.« less
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  • Field-programmable gate arrays are well-suited to DSP and digital communications applications. SRAM-based FPGAs, however, are susceptible to radiation-induced single-event upsets (SEUs) when deployed in space environments. These effects are often handled with the area and power-intensive TMR mitigation technique. This paper evaluates the effects of SEUs in the FPGA configuration memory as noise in a digital filter, showing that many SEUs in a digital communications system cause effects that could be considered noise rather than circuit failure. Since DSP and digital communications applications are designed to withstand certain types of noise, SEU mitigation techniques that are less costly than TMRmore » may be applicable. This could result in large savings in area and power when implementing a reliable system. Our experiments show that, of the SEUs that affected the digital filter with a 20 dB SNR input signal, less than 14% caused an SNR loss of more than 1 dB at the output.« less
  • No abstract prepared.