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Title: Wafer-Level Step-Stressing of InGaP/GaAs HBTs.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1141216
Report Number(s):
SAND2014-1467J
Journal ID: ISSN 1938--6737; 504888
DOE Contract Number:
DE-AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: ECS Transactions; Journal Volume: 61; Journal Issue: 4; Related Information: Proposed for publication in ECS Transactions.
Country of Publication:
United States
Language:
English

Citation Formats

Baca, Albert G., Kotobi, Joshua Ali, Fortune, Torben Ray, Gorenz, Alan, Klem, John Frederick, Briggs, Ronald D., Clevenger, Jascinda, and Patrizi, Gary A. Wafer-Level Step-Stressing of InGaP/GaAs HBTs.. United States: N. p., 2014. Web. doi:10.1149/06104.0009ecst.
Baca, Albert G., Kotobi, Joshua Ali, Fortune, Torben Ray, Gorenz, Alan, Klem, John Frederick, Briggs, Ronald D., Clevenger, Jascinda, & Patrizi, Gary A. Wafer-Level Step-Stressing of InGaP/GaAs HBTs.. United States. doi:10.1149/06104.0009ecst.
Baca, Albert G., Kotobi, Joshua Ali, Fortune, Torben Ray, Gorenz, Alan, Klem, John Frederick, Briggs, Ronald D., Clevenger, Jascinda, and Patrizi, Gary A. Sat . "Wafer-Level Step-Stressing of InGaP/GaAs HBTs.". United States. doi:10.1149/06104.0009ecst.
@article{osti_1141216,
title = {Wafer-Level Step-Stressing of InGaP/GaAs HBTs.},
author = {Baca, Albert G. and Kotobi, Joshua Ali and Fortune, Torben Ray and Gorenz, Alan and Klem, John Frederick and Briggs, Ronald D. and Clevenger, Jascinda and Patrizi, Gary A.},
abstractNote = {Abstract not provided.},
doi = {10.1149/06104.0009ecst},
journal = {ECS Transactions},
number = 4,
volume = 61,
place = {United States},
year = {Sat Feb 01 00:00:00 EST 2014},
month = {Sat Feb 01 00:00:00 EST 2014}
}
  • Abstract not provided.
  • Abstract not provided.
  • Abstract not provided.
  • Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I–V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e.,more » positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III–V/Si heterogeneously integrated electronics.« less
  • Metamorphic pseudosubstrates of In{sub 0.42}Ga{sub 0.58}As were grown by molecular beam epitaxy using step-graded In{sub x}Ga{sub 1-x}As buffer layers grown either directly on a (001) GaAs substrate or on a GaAs substrate overgrown with a layer of low-temperature grown In{sub 0.51}Ga{sub 0.49}P (LT-InGaP). The structures were examined using x-ray reciprocal space mapping to determine the characteristics of the pseudosubstrates and buffer layers. For the sample grown on the LT-InGaP layer, the pseudosubstrate exhibited an asymmetric tilt around [110] toward the [110] direction. Weak-beam dark-field electron imaging shows an imbalance of misfit dislocations with opposite sign Burgers vector. An explanation formore » this tilt is given and it is suggested that it may be responsible for the improved quality of epitaxial layers grown on such pseudosubstrates.« less