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Title: High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1141010
Report Number(s):
SAND2011-7462C
505866
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 20th ECS Meeting and Electrochemical Energy Summit held October 9-14, 2011 in Boston, MA.
Country of Publication:
United States
Language:
English

Citation Formats

Marinella, Matthew, Atcitty, Stanley, DasGupta, Sandeepan, Kaplar, Robert, and Smith, Mark A. High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials.. United States: N. p., 2011. Web.
Marinella, Matthew, Atcitty, Stanley, DasGupta, Sandeepan, Kaplar, Robert, & Smith, Mark A. High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials.. United States.
Marinella, Matthew, Atcitty, Stanley, DasGupta, Sandeepan, Kaplar, Robert, and Smith, Mark A. Sat . "High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials.". United States. https://www.osti.gov/servlets/purl/1141010.
@article{osti_1141010,
title = {High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials.},
author = {Marinella, Matthew and Atcitty, Stanley and DasGupta, Sandeepan and Kaplar, Robert and Smith, Mark A.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {10}
}

Conference:
Other availability
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