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Title: Undoped electron-hole bilayers in a GaAs-AlGaAS double quantum well.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1137329
Report Number(s):
SAND2007-1951C
523773
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the APS March Meeting 2007 held March 4-9, 2007 in Denver, CO.
Country of Publication:
United States
Language:
English

Citation Formats

Seamons, John, Lilly, Michael, Reno, John Louis, and Tibbetts, Denise. Undoped electron-hole bilayers in a GaAs-AlGaAS double quantum well.. United States: N. p., 2007. Web.
Seamons, John, Lilly, Michael, Reno, John Louis, & Tibbetts, Denise. Undoped electron-hole bilayers in a GaAs-AlGaAS double quantum well.. United States.
Seamons, John, Lilly, Michael, Reno, John Louis, and Tibbetts, Denise. Thu . "Undoped electron-hole bilayers in a GaAs-AlGaAS double quantum well.". United States. doi:. https://www.osti.gov/servlets/purl/1137329.
@article{osti_1137329,
title = {Undoped electron-hole bilayers in a GaAs-AlGaAS double quantum well.},
author = {Seamons, John and Lilly, Michael and Reno, John Louis and Tibbetts, Denise},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Mar 01 00:00:00 EST 2007},
month = {Thu Mar 01 00:00:00 EST 2007}
}

Conference:
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  • No abstract prepared.
  • The authors present the fabrication details of completely undoped electron-hole bilayer devices in a GaAs/AlGaAs double quantum well heterostructure with a 30 nm barrier. These devices have independently tunable densities of the two-dimensional electron gas and two-dimensional hole gas. The authors report four-terminal transport measurements of the independently contacted electron and hole layers with balanced densities from 1.2x10{sup 11} cm{sup -2} down to 4x10{sup 10} cm{sup -2} at T=300 mK. The mobilities can exceed 1x10{sup 6} cm{sup 2} V{sup -1} s{sup -1} for electrons and 4x10{sup 5} cm{sup 2} V{sup -1} s{sup -1} for holes.
  • Abstract not provided.
  • Abstract not provided.
  • We demonstrate a hole double quantum dot in an undoped GaAs/AlGaAs heterostructure. The interdot coupling can be tuned over a wide range, from formation of a large single dot to two well-isolated quantum dots. Using charge sensing, we show the ability to completely empty the dot of holes and control the charge occupation in the few-hole regime. The device should allow for control of individual hole spins in single and double quantum dots in GaAs.