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Title: Investigation of the Hurkx model for simualtion of trap-assisted tunneling in narrow band semiconductor diodes.

Abstract

Abstract not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1137266
Report Number(s):
SAND2007-1497C
523682
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the Device Research Conferences held June 18-20, 2007 in South Bend, IN.
Country of Publication:
United States
Language:
English

Citation Formats

Carroll, Malcolm S., Kim, Jin K., gin, aaron, Cich, Michael Joseph, Marsh, Phillip, and Young, Erik W.. Investigation of the Hurkx model for simualtion of trap-assisted tunneling in narrow band semiconductor diodes.. United States: N. p., 2007. Web.
Carroll, Malcolm S., Kim, Jin K., gin, aaron, Cich, Michael Joseph, Marsh, Phillip, & Young, Erik W.. Investigation of the Hurkx model for simualtion of trap-assisted tunneling in narrow band semiconductor diodes.. United States.
Carroll, Malcolm S., Kim, Jin K., gin, aaron, Cich, Michael Joseph, Marsh, Phillip, and Young, Erik W.. Thu . "Investigation of the Hurkx model for simualtion of trap-assisted tunneling in narrow band semiconductor diodes.". United States. doi:. https://www.osti.gov/servlets/purl/1137266.
@article{osti_1137266,
title = {Investigation of the Hurkx model for simualtion of trap-assisted tunneling in narrow band semiconductor diodes.},
author = {Carroll, Malcolm S. and Kim, Jin K. and gin, aaron and Cich, Michael Joseph and Marsh, Phillip and Young, Erik W.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Mar 01 00:00:00 EST 2007},
month = {Thu Mar 01 00:00:00 EST 2007}
}

Conference:
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