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Title: Low-bandgap, monolithic, multi-bandgap, optoelectronic devices

Abstract

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

Inventors:
;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1137114
Patent Number(s):
8,772,623
Application Number:
13/664,142
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO) GFO
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Wanlass, Mark W., and Carapella, Jeffrey J. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices. United States: N. p., 2014. Web.
Wanlass, Mark W., & Carapella, Jeffrey J. Low-bandgap, monolithic, multi-bandgap, optoelectronic devices. United States.
Wanlass, Mark W., and Carapella, Jeffrey J. Tue . "Low-bandgap, monolithic, multi-bandgap, optoelectronic devices". United States. doi:. https://www.osti.gov/servlets/purl/1137114.
@article{osti_1137114,
title = {Low-bandgap, monolithic, multi-bandgap, optoelectronic devices},
author = {Wanlass, Mark W. and Carapella, Jeffrey J.},
abstractNote = {Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 08 00:00:00 EDT 2014},
month = {Tue Jul 08 00:00:00 EDT 2014}
}

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