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Title: Removing a sheet from the surface of a melt using elasticity and buoyancy

Abstract

Embodiments related to sheet production are disclosed. A melt of a material is cooled to form a sheet of the material on the melt. The sheet is formed in a first region at a first sheet height. The sheet is translated to a second region such that it has a second sheet height higher than the first sheet height. The sheet is then separated from the melt. A seed wafer may be used to form the sheet.

Inventors:
; ; ;
Publication Date:
Research Org.:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (USA).
Sponsoring Org.:
USDOE
OSTI Identifier:
1136751
Patent Number(s):
8,764,901
Application Number:
13/039,808
Assignee:
Varian Semiconductor Equipment Associates, Inc. (Gloucester, MA) GFO
DOE Contract Number:  
EE0000595
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Kellerman, Peter L., Sun, Dawei, Helenbrook, Brian, and Harvey, David S. Removing a sheet from the surface of a melt using elasticity and buoyancy. United States: N. p., 2014. Web.
Kellerman, Peter L., Sun, Dawei, Helenbrook, Brian, & Harvey, David S. Removing a sheet from the surface of a melt using elasticity and buoyancy. United States.
Kellerman, Peter L., Sun, Dawei, Helenbrook, Brian, and Harvey, David S. Tue . "Removing a sheet from the surface of a melt using elasticity and buoyancy". United States. doi:. https://www.osti.gov/servlets/purl/1136751.
@article{osti_1136751,
title = {Removing a sheet from the surface of a melt using elasticity and buoyancy},
author = {Kellerman, Peter L. and Sun, Dawei and Helenbrook, Brian and Harvey, David S.},
abstractNote = {Embodiments related to sheet production are disclosed. A melt of a material is cooled to form a sheet of the material on the melt. The sheet is formed in a first region at a first sheet height. The sheet is translated to a second region such that it has a second sheet height higher than the first sheet height. The sheet is then separated from the melt. A seed wafer may be used to form the sheet.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 01 00:00:00 EDT 2014},
month = {Tue Jul 01 00:00:00 EDT 2014}
}

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Works referenced in this record:

Investigation of the meniscus stability in horizontal crystal ribbon growth
journal, September 1980


Improvements in the Horizontal Ribbon Growth technique for single crystal silicon
journal, September 1980