Plated lamination structures for integrated magnetic devices
Semiconductor integrated magnetic devices such as inductors, transformers, etc., having laminated magnetic-insulator stack structures are provided, wherein the laminated magnetic-insulator stack structures are formed using electroplating techniques. For example, an integrated laminated magnetic device includes a multilayer stack structure having alternating magnetic and insulating layers formed on a substrate, wherein each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by an insulating layer, and a local shorting structure to electrically connect each magnetic layer in the multilayer stack structure to an underlying magnetic layer in the multilayer stack structure to facilitate electroplating of the magnetic layers using an underlying conductive layer (magnetic or seed layer) in the stack as an electrical cathode/anode for each electroplated magnetic layer in the stack structure.
- Research Organization:
- International Business Machines Corp., Armonk, NY (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EE0002892
- Assignee:
- International Business Machines Corporation (Armonk, NY)
- Patent Number(s):
- 8,754,500
- Application Number:
- 13/597,412
- OSTI ID:
- 1134224
- Resource Relation:
- Patent File Date: 2012 Aug 29
- Country of Publication:
- United States
- Language:
- English
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