Targets and processes for fabricating same
In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 .mu.m. In particular examples, the distance is less than about 1 .mu.m. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.
- Research Organization:
- Board of Regents of the Nevada System of Higher Education, Reno, NV (USA)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FC52-01NV14050
- Assignee:
- Board of Regents of the Nevada System of Higher Education (Reno, NV)
- Patent Number(s):
- 8,750,459
- Application Number:
- 13/418,003
- OSTI ID:
- 1133937
- Country of Publication:
- United States
- Language:
- English
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Targets and processes for fabricating same
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