Atomic layer deposition of quaternary chalcogenides
Patent
·
OSTI ID:1133663
Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu.sub.2ZnSnS.sub.4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-06CH11357
- Assignee:
- Uchicago Argonne, LLC (Chicago, IL)
- Patent Number(s):
- 8,741,386
- Application Number:
- 13/631,135
- OSTI ID:
- 1133663
- Country of Publication:
- United States
- Language:
- English
Atomic Layer Deposition of Tin Monosulfide Thin Films
|
journal | September 2011 |
Atomic Layer Deposition of the Quaternary Chalcogenide Cu 2 ZnSnS 4
|
journal | August 2012 |
Atmospheric Pressure Chemical Vapor Deposition of Tin Sulfides (SnS, Sn 2 S 3 , and SnS 2 ) on Glass
|
journal | July 1999 |
Tin Monosulfide Thin Films Grown by Atomic Layer Deposition Using Tin 2,4-Pentanedionate and Hydrogen Sulfide
|
journal | September 2010 |
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