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Title: Reduced Interaction Layer Growth of U-Mo Dispersion in Al-Si

Authors:
; ; ;  [1];  [2]
  1. (Nuclear Engineering Division)
  2. (
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1132752
Report Number(s):
ANL/NE/JA-73333
Journal ID: 0022-3115
DOE Contract Number:  
DE-AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 430; Journal Issue: 1-3 ; Nov. 2012
Country of Publication:
United States
Language:
ENGLISH

Citation Formats

Kim, Y.S., Park, J. M., Ryu, H.J., Hofman, G. L., and Korea Atomic Energy Research Institute). Reduced Interaction Layer Growth of U-Mo Dispersion in Al-Si. United States: N. p., 2012. Web. doi:10.1016/j.jnucmat.2012.06.032.
Kim, Y.S., Park, J. M., Ryu, H.J., Hofman, G. L., & Korea Atomic Energy Research Institute). Reduced Interaction Layer Growth of U-Mo Dispersion in Al-Si. United States. doi:10.1016/j.jnucmat.2012.06.032.
Kim, Y.S., Park, J. M., Ryu, H.J., Hofman, G. L., and Korea Atomic Energy Research Institute). Thu . "Reduced Interaction Layer Growth of U-Mo Dispersion in Al-Si". United States. doi:10.1016/j.jnucmat.2012.06.032.
@article{osti_1132752,
title = {Reduced Interaction Layer Growth of U-Mo Dispersion in Al-Si},
author = {Kim, Y.S. and Park, J. M. and Ryu, H.J. and Hofman, G. L. and Korea Atomic Energy Research Institute)},
abstractNote = {},
doi = {10.1016/j.jnucmat.2012.06.032},
journal = {Journal of Nuclear Materials},
number = 1-3 ; Nov. 2012,
volume = 430,
place = {United States},
year = {2012},
month = {11}
}