Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

Journal Article · Mon Dec 23 00:00:00 EST 2013 · Journal of Applied Physics, 114(24):243503

DOI:https://doi.org/10.1063/1.4851015· OSTI ID:1132710

Kovacs, Andras; Ney, A.; Duchamp, Martial; Ney, V.; Boothroyd, Chris; Galindo, Pedro L.; Kaspar, Tiffany C.; Chambers, Scott A.; Dunin-Borkowski, Rafal

We have studied planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al2O3) and the Co:ZnO/Al2O3 interface structure at atomic resolution using aberration-corrected transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS). Comparing Co:ZnO samples deposited by pulsed laser deposition and reactive magnetron sputtering, both exhibit extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 3-4 Co:ZnO layers at the interface.. In addition, we have measured the local strain which reveals the lattice distortion around the stacking faults.

• Research Organization: Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1132710
• Report Number(s): PNNL-SA-96828; 47718; KC0203020
• Journal Information: Journal of Applied Physics, 114(24):243503, Journal Name: Journal of Applied Physics, 114(24):243503
• Country of Publication: United States
• Language: English

Related Subjects

Environmental Molecular Sciences Laboratory