Structural defects in GaN revealed by Transmission Electron Microscopy
Journal Article
·
· Japanese Journal of Applied Physics
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-05CH11231
- OSTI ID:
- 1131027
- Report Number(s):
- LBNL-6624E
- Journal Information:
- Japanese Journal of Applied Physics, Vol. 53, Issue 10; ISSN 0021-4922
- Publisher:
- Japan Society of Applied PhysicsCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 20 works
Citation information provided by
Web of Science
Web of Science
Three dimensional localization of unintentional oxygen impurities in gallium nitride
|
journal | January 2019 |
Nanopipe formation as a result of boron impurity segregation in gallium nitride grown by halogen-free vapor phase epitaxy
|
journal | December 2016 |
Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates
|
journal | December 2019 |
Similar Records
Structural defects in heteroepitaxial and homoepitaxial GaN
Comparison between structural properties of bulk GaN grown under high N pressure and GaN grown by other methods
Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers.
Conference
·
Fri Nov 01 00:00:00 EST 1996
·
OSTI ID:1131027
Comparison between structural properties of bulk GaN grown under high N pressure and GaN grown by other methods
Conference
·
Wed Jul 31 00:00:00 EDT 2002
·
OSTI ID:1131027
Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers.
Journal Article
·
Tue Jun 01 00:00:00 EDT 2004
· Proposed for publication in Physical Review B.
·
OSTI ID:1131027
+2 more