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Title: Two-color infrared detector

Patent ·
OSTI ID:1131017

A two-color detector includes a first absorber layer. The first absorber layer exhibits a first valence band energy characterized by a first valence band energy function. A barrier layer adjoins the first absorber layer at a first interface. The barrier layer exhibits a second valence band energy characterized by a second valence band energy function. The barrier layer also adjoins a second absorber layer at a second interface. The second absorber layer exhibits a third valence band energy characterized by a third valence band energy function. The first and second valence band energy functions are substantially functionally or physically continuous at the first interface and the second and third valence band energy functions are substantially functionally or physically continuous at the second interface.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
8,723,161
Application Number:
13/352,098
OSTI ID:
1131017
Resource Relation:
Patent File Date: 2012 Jan 17
Country of Publication:
United States
Language:
English

References (6)

Unipolar Semiconductor Photodetector with Suppressed Dark Current and Method for Producing the Same patent-application October 2009
Single-Band and Dual-Band Infrared Detectors patent-application June 2013
Heterojunction band offsets and effective masses in III-V quaternary alloys journal January 1991
nBn detector, an infrared detector with reduced dark current and higher operating temperature journal October 2006
nBn based infrared detectors using type-II InAs/(In,Ga)Sb superlattices conference June 2008
Mesa-isolated InGaAs photodetectors with low dark current journal July 2009

Cited By (1)


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