Thin, High Quality GaInP Compositionally Graded Buffer Layers Grown at High Growth Rates for Metamorphic III-V Solar Cell Applications
Journal Article
·
· Journal of Crystal Growth
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1130636
- Journal Information:
- Journal of Crystal Growth, Vol. 393, Issue 1 May 2014
- Country of Publication:
- United States
- Language:
- English
Similar Records
Lattice-Mismatched 0.7-eV GaInAs Solar Cells Grown on GaAs Using GaInP Compositionally Graded Buffers
Towards a III-V Solar Cell with a Metamorphic Graded Buffer Directly Grown on V-Groove Si Substrates
Effects of rapid thermal annealing on quality of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As multiquantum wells grown on a compositionally graded InAlAs/InAlGaAs metamorphic buffer layer
Journal Article
·
Wed Jan 01 00:00:00 EST 2014
· IEEE Journal of Photovoltaics
·
OSTI ID:1130636
+5 more
Towards a III-V Solar Cell with a Metamorphic Graded Buffer Directly Grown on V-Groove Si Substrates
Conference
·
Thu Aug 26 00:00:00 EDT 2021
·
OSTI ID:1130636
+5 more
Effects of rapid thermal annealing on quality of In{sub 0.52}Al{sub 0.48}As/In{sub 0.53}Ga{sub 0.47}As multiquantum wells grown on a compositionally graded InAlAs/InAlGaAs metamorphic buffer layer
Journal Article
·
Mon Dec 27 00:00:00 EST 2004
· Applied Physics Letters
·
OSTI ID:1130636