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Title: Method of fabricating a solar cell with a tunnel dielectric layer

Abstract

Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1130063
Patent Number(s):
8,709,851
Application Number:
13/677,611
Assignee:
SunPower Corporation (San Jose, CA) GFO
DOE Contract Number:  
FC36-07GO17043
Resource Type:
Patent
Resource Relation:
Patent File Date: 2012 Nov 15
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Dennis, Tim, Harrington, Scott, Manning, Jane, Smith, David D, and Waldhauer, Ann. Method of fabricating a solar cell with a tunnel dielectric layer. United States: N. p., 2014. Web.
Dennis, Tim, Harrington, Scott, Manning, Jane, Smith, David D, & Waldhauer, Ann. Method of fabricating a solar cell with a tunnel dielectric layer. United States.
Dennis, Tim, Harrington, Scott, Manning, Jane, Smith, David D, and Waldhauer, Ann. Tue . "Method of fabricating a solar cell with a tunnel dielectric layer". United States. doi:. https://www.osti.gov/servlets/purl/1130063.
@article{osti_1130063,
title = {Method of fabricating a solar cell with a tunnel dielectric layer},
author = {Dennis, Tim and Harrington, Scott and Manning, Jane and Smith, David D and Waldhauer, Ann},
abstractNote = {Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 29 00:00:00 EDT 2014},
month = {Tue Apr 29 00:00:00 EDT 2014}
}

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Works referenced in this record:

Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors
journal, January 1996

  • Simoen, E.; Decoutere, S.; Cuthbertson, A.
  • IEEE Transactions on Electron Devices, Vol. 43, Issue 12, p. 2261-2268
  • DOI: 10.1109/16.544419

Physical and Electrical Characterization of Thin Anodic Oxides on Si(100)
journal, January 1995

  • Bardwell, J.
  • Journal of The Electrochemical Society, Vol. 142, Issue 11, p. 3933-3940
  • DOI: 10.1149/1.2048437

In Situ Characterization of Anodic Silicon Oxide Films by AC Impedance Measurements
journal, January 1995

  • Schmuki, P.
  • Journal of The Electrochemical Society, Vol. 142, Issue 5, p. 1705-1712
  • DOI: 10.1149/1.2048644

Growth and characterization of anodic oxides on Si(100) formed in 0.1 M hydrochloric acid
journal, June 1996

  • Bardwell, J.; Draper, N.; Schmuki, P.
  • Journal of Applied Physics, Vol. 79, Issue 11, p. 8761-8769
  • DOI: 10.1063/1.362502

Processing dependence of metal/tunnel‐oxide/silicon junctions
journal, May 1980

  • Dressendorfer, P.; Lai, S.; Barker, R.
  • Applied Physics Letters, Vol. 36, Issue 10, p. 850-852
  • DOI: 10.1063/1.91346