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Method of fabricating a solar cell with a tunnel dielectric layer

Patent ·
OSTI ID:1130063

Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described.

Research Organization:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07GO17043
Assignee:
SunPower Corporation (San Jose, CA)
Patent Number(s):
8,709,851
Application Number:
13/677,611
OSTI ID:
1130063
Country of Publication:
United States
Language:
English

References (6)

Growth and characterization of anodic oxides on Si(100) formed in 0.1 M hydrochloric acid journal June 1996
Physical and Electrical Characterization of Thin Anodic Oxides on Si(100) journal January 1995
In Situ Characterization of Anodic Silicon Oxide Films by AC Impedance Measurements journal January 1995
Defects in silicon substrates journal January 1977
Processing dependence of metal/tunnel‐oxide/silicon junctions journal May 1980
Impact of polysilicon emitter interfacial layer engineering on the 1/f noise of bipolar transistors journal January 1996

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