Measurement of the B0s lifetime using the semileptonic decay channel B0s → D-sμ+vX
- National Polytechnic Inst. (IPN), Zacatenco (Mexico). Centre for Research and Advanced Studies (CINVESTAV)
We report a measurement of the B0s lifetime in the semileptonic decay channel BB0s → D-sμ+vX (and its charge conjugate), using approximately 0.4 fb-1 of data collected with the DØ detector during 2002–2004. Using 5176 reconstructed D-s μ+ signal events, we have measured the B0s lifetime to be τ (B0s) = 1.398 ± 0.044 (stat)+0.028 -0.025 (syst) ps. This is the most precise measurement of the B0s lifetime to date.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- DOE Contract Number:
- AC02-07CH11359
- OSTI ID:
- 1128092
- Report Number(s):
- FERMILAB-THESIS-2009-70
- Country of Publication:
- United States
- Language:
- English
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