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Title: Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics

Abstract

Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures whereby a second portion of said three-dimensional microelectronic structure formation is enhanced; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said second portion of a selected three-dimensional microelectronic structure is formed from said second precursor material; and, positionallymore » adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs.« less

Inventors:
; ; ;
Publication Date:
Research Org.:
LANL (Los Alamos National Laboratory (LANL), Los Alamos, NM (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1126701
Patent Number(s):
8,669,164
Application Number:
12/753,682
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM)
DOE Contract Number:  
AC52-06NA25396
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Maxwell, James L, Rose, Chris R, Black, Marcie R, and Springer, Robert W. Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics. United States: N. p., 2014. Web.
Maxwell, James L, Rose, Chris R, Black, Marcie R, & Springer, Robert W. Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics. United States.
Maxwell, James L, Rose, Chris R, Black, Marcie R, and Springer, Robert W. Tue . "Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics". United States. https://www.osti.gov/servlets/purl/1126701.
@article{osti_1126701,
title = {Method of fabricating free-form, high-aspect ratio components for high-current, high-speed microelectrics},
author = {Maxwell, James L and Rose, Chris R and Black, Marcie R and Springer, Robert W},
abstractNote = {Microelectronic structures and devices, and method of fabricating a three-dimensional microelectronic structure is provided, comprising passing a first precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures to enhance formation of a first portion of said three-dimensional microelectronic structure; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said first portion of a selected three-dimensional microelectronic structure is formed from said first precursor material; positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs; passing a second precursor material for a selected three-dimensional microelectronic structure into a reaction chamber at temperatures sufficient to maintain said precursor material in a predominantly gaseous state; maintaining said reaction chamber under sufficient pressures whereby a second portion of said three-dimensional microelectronic structure formation is enhanced; applying an electric field between an electrode and said microelectronic structure at a desired point under conditions whereat said second portion of a selected three-dimensional microelectronic structure is formed from said second precursor material; and, positionally adjusting either said formed three-dimensional microelectronic structure or said electrode whereby further controlled growth of said three-dimensional microelectronic structure occurs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2014},
month = {3}
}

Patent:

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