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Title: Method for fabrication of crack-free ceramic dielectric films

Abstract

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

Inventors:
; ; ; ;
Publication Date:
Research Org.:
ANL (Argonne National Laboratory (ANL), Argonne, IL (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1124087
Patent Number(s):
8,647,737
Application Number:
13/250,926
Assignee:
UChicago Argonne, LLC (Chicago, IL) ANL
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ma, Beihai, Balachandran, Uthamalingam, Chao, Sheng, Liu, Shanshan, and Narayanan, Manoj. Method for fabrication of crack-free ceramic dielectric films. United States: N. p., 2014. Web.
Ma, Beihai, Balachandran, Uthamalingam, Chao, Sheng, Liu, Shanshan, & Narayanan, Manoj. Method for fabrication of crack-free ceramic dielectric films. United States.
Ma, Beihai, Balachandran, Uthamalingam, Chao, Sheng, Liu, Shanshan, and Narayanan, Manoj. Tue . "Method for fabrication of crack-free ceramic dielectric films". United States. doi:. https://www.osti.gov/servlets/purl/1124087.
@article{osti_1124087,
title = {Method for fabrication of crack-free ceramic dielectric films},
author = {Ma, Beihai and Balachandran, Uthamalingam and Chao, Sheng and Liu, Shanshan and Narayanan, Manoj},
abstractNote = {The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 11 00:00:00 EST 2014},
month = {Tue Feb 11 00:00:00 EST 2014}
}

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Works referenced in this record:

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journal, January 2010


Improved dielectric properties of lead lanthanum zirconate titanate thin films on copper substrates
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