Low temperature junction growth using hot-wire chemical vapor deposition
Patent
·
OSTI ID:1118271
A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.
- Research Organization:
- NREL (National Renewable Energy Laboratory (NREL), Golden, CO (United States))
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99GO10337;
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Number(s):
- 8,642,450
- Application Number:
- 12/742,001
- OSTI ID:
- 1118271
- Country of Publication:
- United States
- Language:
- English
Effective interfaces in silicon heterojunction solar cells
|
conference | January 2005 |
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