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Title: Characterization of SOI MEMS Sidewall Roughness.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1111708
Report Number(s):
SAND2011-8515C
456962
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the ASME 2011 International Mechanical Engineering Congress & Exposition held November 11-17, 2011 in Denver, CO.
Country of Publication:
United States
Language:
English

Citation Formats

Phinney, Leslie Mary, McKenzie, Bonnie Beth, Ohlhausen, James Anthony, Buchheit, Thomas Edward, and Shul, Randy John. Characterization of SOI MEMS Sidewall Roughness.. United States: N. p., 2011. Web.
Phinney, Leslie Mary, McKenzie, Bonnie Beth, Ohlhausen, James Anthony, Buchheit, Thomas Edward, & Shul, Randy John. Characterization of SOI MEMS Sidewall Roughness.. United States.
Phinney, Leslie Mary, McKenzie, Bonnie Beth, Ohlhausen, James Anthony, Buchheit, Thomas Edward, and Shul, Randy John. Tue . "Characterization of SOI MEMS Sidewall Roughness.". United States. doi:. https://www.osti.gov/servlets/purl/1111708.
@article{osti_1111708,
title = {Characterization of SOI MEMS Sidewall Roughness.},
author = {Phinney, Leslie Mary and McKenzie, Bonnie Beth and Ohlhausen, James Anthony and Buchheit, Thomas Edward and Shul, Randy John},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EDT 2011},
month = {Tue Nov 01 00:00:00 EDT 2011}
}

Conference:
Other availability
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