ZnO buffered platinized silicon substrates for high temperature oxide thin film synthesis.
Abstract
Abstract not provided.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1110609
- Report Number(s):
- SAND2011-0193C
474142
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Conference
- Resource Relation:
- Conference: Proposed for presentation at the Electronic Materials and Applications 2011 held January 19-21, 2011 in Orlando, FL.
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Ihlefeld, Jon., Meyer, Kelsey, Brennecka, Geoffrey L., Shelton, Chris, Laughlin, Brian J., Lam, Peter, and Maria, Jon-Paul. ZnO buffered platinized silicon substrates for high temperature oxide thin film synthesis.. United States: N. p., 2011.
Web.
Ihlefeld, Jon., Meyer, Kelsey, Brennecka, Geoffrey L., Shelton, Chris, Laughlin, Brian J., Lam, Peter, & Maria, Jon-Paul. ZnO buffered platinized silicon substrates for high temperature oxide thin film synthesis.. United States.
Ihlefeld, Jon., Meyer, Kelsey, Brennecka, Geoffrey L., Shelton, Chris, Laughlin, Brian J., Lam, Peter, and Maria, Jon-Paul. 2011.
"ZnO buffered platinized silicon substrates for high temperature oxide thin film synthesis.". United States. https://www.osti.gov/servlets/purl/1110609.
@article{osti_1110609,
title = {ZnO buffered platinized silicon substrates for high temperature oxide thin film synthesis.},
author = {Ihlefeld, Jon. and Meyer, Kelsey and Brennecka, Geoffrey L. and Shelton, Chris and Laughlin, Brian J. and Lam, Peter and Maria, Jon-Paul},
abstractNote = {Abstract not provided.},
doi = {},
url = {https://www.osti.gov/biblio/1110609},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2011},
month = {Sat Jan 01 00:00:00 EST 2011}
}
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