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Title: Connection between GaN and InGaN Growth Mechanisms and Surface Morphology.

Abstract

Abstract not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1110542
Report Number(s):
SAND2013-7710J
474028
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Crystal Growth; Related Information: Proposed for publication in Journal of Crystal Growth.
Country of Publication:
United States
Language:
English

Citation Formats

Koleske, Daniel David, Lee, Stephen Roger, Crawford, Mary Hagerott, Cross, Karen Charlene, Coltrin, Michael E., and Kempisty, Jeffrey Michael. Connection between GaN and InGaN Growth Mechanisms and Surface Morphology.. United States: N. p., 2013. Web.
Koleske, Daniel David, Lee, Stephen Roger, Crawford, Mary Hagerott, Cross, Karen Charlene, Coltrin, Michael E., & Kempisty, Jeffrey Michael. Connection between GaN and InGaN Growth Mechanisms and Surface Morphology.. United States.
Koleske, Daniel David, Lee, Stephen Roger, Crawford, Mary Hagerott, Cross, Karen Charlene, Coltrin, Michael E., and Kempisty, Jeffrey Michael. Sun . "Connection between GaN and InGaN Growth Mechanisms and Surface Morphology.". United States. doi:.
@article{osti_1110542,
title = {Connection between GaN and InGaN Growth Mechanisms and Surface Morphology.},
author = {Koleske, Daniel David and Lee, Stephen Roger and Crawford, Mary Hagerott and Cross, Karen Charlene and Coltrin, Michael E. and Kempisty, Jeffrey Michael},
abstractNote = {Abstract not provided.},
doi = {},
journal = {Journal of Crystal Growth},
number = ,
volume = ,
place = {United States},
year = {Sun Sep 01 00:00:00 EDT 2013},
month = {Sun Sep 01 00:00:00 EDT 2013}
}