skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Layered semiconductor neutron detectors

Abstract

Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

Inventors:
;
Publication Date:
Research Org.:
LBNL (Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
1109473
Patent Number(s):
8,604,441
Application Number:
12/999,909
Assignee:
The Regents of the University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Mao, Samuel S, and Perry, Dale L. Layered semiconductor neutron detectors. United States: N. p., 2013. Web.
Mao, Samuel S, & Perry, Dale L. Layered semiconductor neutron detectors. United States.
Mao, Samuel S, and Perry, Dale L. Tue . "Layered semiconductor neutron detectors". United States. https://www.osti.gov/servlets/purl/1109473.
@article{osti_1109473,
title = {Layered semiconductor neutron detectors},
author = {Mao, Samuel S and Perry, Dale L},
abstractNote = {Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {12}
}

Patent:

Save / Share: