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Title: Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO2.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1109406
Report Number(s):
SAND2011-7369J
472843
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Thin Solid Films
Additional Journal Information:
Related Information: Proposed for publication in Thin Solid Films.
Country of Publication:
United States
Language:
English

Citation Formats

Cederberg, Jeffrey G., Li, Qiming, Carroll, Malcolm S., Leonhardt, Darin, Sheng, Josephine Juin-Jye, Romero, Manual J., Kuciauskas, Darius, and Friedman, Daniel J. Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO2.. United States: N. p., 2011. Web.
Cederberg, Jeffrey G., Li, Qiming, Carroll, Malcolm S., Leonhardt, Darin, Sheng, Josephine Juin-Jye, Romero, Manual J., Kuciauskas, Darius, & Friedman, Daniel J. Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO2.. United States.
Cederberg, Jeffrey G., Li, Qiming, Carroll, Malcolm S., Leonhardt, Darin, Sheng, Josephine Juin-Jye, Romero, Manual J., Kuciauskas, Darius, and Friedman, Daniel J. Sat . "Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO2.". United States.
@article{osti_1109406,
title = {Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO2.},
author = {Cederberg, Jeffrey G. and Li, Qiming and Carroll, Malcolm S. and Leonhardt, Darin and Sheng, Josephine Juin-Jye and Romero, Manual J. and Kuciauskas, Darius and Friedman, Daniel J.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {Thin Solid Films},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {10}
}