Sub bandgap light induced carrier generation at room temperature in Silicon Carbide MOS capacitors.
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1109335
- Report Number(s):
- SAND2011-3524J; 471538
- Journal Information:
- Applied Physics Letters, Vol. 99, Issue 17; Related Information: Proposed for publication in Applied Physics Letters.; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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