skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: First Principles Defect Chemistry for Modeling Irradiated GaAs and III-V's.

Conference ·
OSTI ID:1108804

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1108804
Report Number(s):
SAND2011-1791C; 470925
Resource Relation:
Conference: Proposed for presentation at the 2011 HEART Conference held March 29 - April 1, 2011 in Orlando, FL.
Country of Publication:
United States
Language:
English

Similar Records

FIRST-PRINCIPLES DEFECT CHEMISTRY FOR MODELING IRRADIATED GaAs AND III-V SEMICONDUCTOR DEVICES.
Journal Article · Wed Jun 01 00:00:00 EDT 2011 · JOURNAL OF RADIATION EFFECTS, RESEARCH AND ENGINEERING · OSTI ID:1108804

From first-principles defect chemistry to device damage models of radiation effects in III-V semiconductors.
Conference · Mon Oct 01 00:00:00 EDT 2018 · OSTI ID:1108804

Radiation defect chemistry in GaAs and III-V's.
Conference · Mon Nov 01 00:00:00 EDT 2010 · OSTI ID:1108804

Related Subjects