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Title: Identifying Threading Dislocations in GaN Films and Substrates by Electron Channeling.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1108324
Report Number(s):
SAND2011-2778J
470521
DOE Contract Number:
AC04-94AL85000
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Microscopy; Related Information: Proposed for publication in Journal of Microscopy.
Country of Publication:
United States
Language:
English

Citation Formats

Koleske, Daniel David, Kamaladasa, Ranga J., Liu, Fang, Porter, Lisa M., Davis, Robert F., Mulholland, Greg, Jones, Kenneth A., and Picard, Yoosuf N. Identifying Threading Dislocations in GaN Films and Substrates by Electron Channeling.. United States: N. p., 2011. Web.
Koleske, Daniel David, Kamaladasa, Ranga J., Liu, Fang, Porter, Lisa M., Davis, Robert F., Mulholland, Greg, Jones, Kenneth A., & Picard, Yoosuf N. Identifying Threading Dislocations in GaN Films and Substrates by Electron Channeling.. United States.
Koleske, Daniel David, Kamaladasa, Ranga J., Liu, Fang, Porter, Lisa M., Davis, Robert F., Mulholland, Greg, Jones, Kenneth A., and Picard, Yoosuf N. Fri . "Identifying Threading Dislocations in GaN Films and Substrates by Electron Channeling.". United States. doi:.
@article{osti_1108324,
title = {Identifying Threading Dislocations in GaN Films and Substrates by Electron Channeling.},
author = {Koleske, Daniel David and Kamaladasa, Ranga J. and Liu, Fang and Porter, Lisa M. and Davis, Robert F. and Mulholland, Greg and Jones, Kenneth A. and Picard, Yoosuf N.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {Journal of Microscopy},
number = ,
volume = ,
place = {United States},
year = {Fri Apr 01 00:00:00 EDT 2011},
month = {Fri Apr 01 00:00:00 EDT 2011}
}