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Title: Magnetotransport Properties of Quasi-Free Standing Epitaxial Bilayer Graphene on SiC: Evidence for Bernal Stacking.

Abstract

Abstract not provided.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1108266
Report Number(s):
SAND2011-2951J
470375
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Physical Review B
Additional Journal Information:
Related Information: Proposed for publication in Physical Review B.
Country of Publication:
United States
Language:
English

Citation Formats

Ohta, Taisuke, Beechem, III, Thomas Edwin, Lee, K, Kim, S, Points, M. S., and Tutuc, E. Magnetotransport Properties of Quasi-Free Standing Epitaxial Bilayer Graphene on SiC: Evidence for Bernal Stacking.. United States: N. p., 2011. Web.
Ohta, Taisuke, Beechem, III, Thomas Edwin, Lee, K, Kim, S, Points, M. S., & Tutuc, E. Magnetotransport Properties of Quasi-Free Standing Epitaxial Bilayer Graphene on SiC: Evidence for Bernal Stacking.. United States.
Ohta, Taisuke, Beechem, III, Thomas Edwin, Lee, K, Kim, S, Points, M. S., and Tutuc, E. Fri . "Magnetotransport Properties of Quasi-Free Standing Epitaxial Bilayer Graphene on SiC: Evidence for Bernal Stacking.". United States.
@article{osti_1108266,
title = {Magnetotransport Properties of Quasi-Free Standing Epitaxial Bilayer Graphene on SiC: Evidence for Bernal Stacking.},
author = {Ohta, Taisuke and Beechem, III, Thomas Edwin and Lee, K and Kim, S and Points, M. S. and Tutuc, E},
abstractNote = {Abstract not provided.},
doi = {},
journal = {Physical Review B},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {4}
}