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Title: Bypass diode for a solar cell

Abstract

Methods of fabricating bypass diodes for solar cells are described. In once embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.

Inventors:
; ; ;
Publication Date:
Research Org.:
SunPower Corporation (San Jose, CA)
Sponsoring Org.:
USDOE
OSTI Identifier:
1107919
Patent Number(s):
8,580,599
Application Number:
13/371,241
Assignee:
SunPower Corporation (San Jose, CA)
DOE Contract Number:  
FC36-07G017043
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY

Citation Formats

Rim, Seung Bum, Kim, Taeseok, Smith, David D, and Cousins, Peter J. Bypass diode for a solar cell. United States: N. p., 2013. Web.
Rim, Seung Bum, Kim, Taeseok, Smith, David D, & Cousins, Peter J. Bypass diode for a solar cell. United States.
Rim, Seung Bum, Kim, Taeseok, Smith, David D, and Cousins, Peter J. Tue . "Bypass diode for a solar cell". United States. https://www.osti.gov/servlets/purl/1107919.
@article{osti_1107919,
title = {Bypass diode for a solar cell},
author = {Rim, Seung Bum and Kim, Taeseok and Smith, David D and Cousins, Peter J},
abstractNote = {Methods of fabricating bypass diodes for solar cells are described. In once embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed on the first conductive region. In another embodiment, a method includes forming a first conductive region of a first conductivity type above a substrate of a solar cell. A second conductive region of a second conductivity type is formed within, and surrounded by, an uppermost portion of the first conductive region but is not formed in a lowermost portion of the first conductive region.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {11}
}

Patent:

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