Hydrogen incorporation into III-V nitrides during processing
Conference
·
OSTI ID:110730
- Univ. of Florida, Gainesville, FL (United States); and others
Hydrogen is readily incorporated into GaN and related alloys during wet and dry etching, chemical vapor deposition of dielectric overlayers, boiling in water and other process steps, in addition to its effects during MOCVD or MOMBE growth. The hydrogen is bound at defects or impurities and passivates their electrical activity. Reactivation occurs at 450-550{degrees}C, but evolution from the crystal requires much higher temperatures ({ge} 800{degrees}C).
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 110730
- Report Number(s):
- SAND-95-2102C; CONF-951007-3; ON: DE96000783; TRN: 95:007291
- Resource Relation:
- Conference: 188. meeting of the Electrochemical Society, Chicago, IL (United States), 8-13 Oct 1995; Other Information: PBD: [1995]
- Country of Publication:
- United States
- Language:
- English
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