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Title: Sub-bandgap light-induced carrier generation at room temperature in Silicon Carbide MOS capacitors.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1106915
Report Number(s):
SAND2011-6132C
464387
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the International Conference on Silicon Carbide and Related Materials held September 11-16, 2011 in Cleveland, OH.
Country of Publication:
United States
Language:
English

Citation Formats

DasGupta, Sandeepan, Armstrong, Andrew., Kaplar, Robert, Marinella, Matthew, Smith, Mark A., Atcitty, Stanley, and Brock, Reinhard. Sub-bandgap light-induced carrier generation at room temperature in Silicon Carbide MOS capacitors.. United States: N. p., 2011. Web.
DasGupta, Sandeepan, Armstrong, Andrew., Kaplar, Robert, Marinella, Matthew, Smith, Mark A., Atcitty, Stanley, & Brock, Reinhard. Sub-bandgap light-induced carrier generation at room temperature in Silicon Carbide MOS capacitors.. United States.
DasGupta, Sandeepan, Armstrong, Andrew., Kaplar, Robert, Marinella, Matthew, Smith, Mark A., Atcitty, Stanley, and Brock, Reinhard. Mon . "Sub-bandgap light-induced carrier generation at room temperature in Silicon Carbide MOS capacitors.". United States. https://www.osti.gov/servlets/purl/1106915.
@article{osti_1106915,
title = {Sub-bandgap light-induced carrier generation at room temperature in Silicon Carbide MOS capacitors.},
author = {DasGupta, Sandeepan and Armstrong, Andrew. and Kaplar, Robert and Marinella, Matthew and Smith, Mark A. and Atcitty, Stanley and Brock, Reinhard},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2011},
month = {8}
}

Conference:
Other availability
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