A Photocapacitance Decay Technique for Interface Trap Characterization near Inversion Band in Wide Bandgap MOS Capacitors.
Journal Article
·
· IEEE Transactions on Electron Devices
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1106493
- Report Number(s):
- SAND2013-5046J; 465290
- Journal Information:
- IEEE Transactions on Electron Devices, Vol. 60, Issue 8; Related Information: Proposed for publication in IEEE Transactions on Electron Devices.; ISSN 0018--9383
- Country of Publication:
- United States
- Language:
- English
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