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Title: Modeling Excitation-Dependent Bandstructure Effects on InGaN Light-Emitting Diode Efficiency.

Abstract

Abstract not provided.

Authors:
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1106450
Report Number(s):
SAND2011-7339J
Journal ID: ISSN 1094--4087; 464797
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Journal Article
Journal Name:
Optics Express
Additional Journal Information:
Journal Volume: 19; Journal Issue: 22; Related Information: Proposed for publication in Optics Express.; Journal ID: ISSN 1094--4087
Country of Publication:
United States
Language:
English

Citation Formats

Chow, Weng W. Modeling Excitation-Dependent Bandstructure Effects on InGaN Light-Emitting Diode Efficiency.. United States: N. p., 2011. Web. doi:10.1364/OE.19.021818.
Chow, Weng W. Modeling Excitation-Dependent Bandstructure Effects on InGaN Light-Emitting Diode Efficiency.. United States. doi:10.1364/OE.19.021818.
Chow, Weng W. Sat . "Modeling Excitation-Dependent Bandstructure Effects on InGaN Light-Emitting Diode Efficiency.". United States. doi:10.1364/OE.19.021818.
@article{osti_1106450,
title = {Modeling Excitation-Dependent Bandstructure Effects on InGaN Light-Emitting Diode Efficiency.},
author = {Chow, Weng W.},
abstractNote = {Abstract not provided.},
doi = {10.1364/OE.19.021818},
journal = {Optics Express},
issn = {1094--4087},
number = 22,
volume = 19,
place = {United States},
year = {2011},
month = {10}
}