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Title: Topological limit of ultrathin quasi-free-standing Bi 2Te 3 films grown on Si(111)

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1104091
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 85 Journal Issue: 19; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Liu, Yang, Bian, Guang, Miller, T., Bissen, Mark, and Chiang, T.-C. Topological limit of ultrathin quasi-free-standing Bi2Te3 films grown on Si(111). United States: N. p., 2012. Web. doi:10.1103/PhysRevB.85.195442.
Liu, Yang, Bian, Guang, Miller, T., Bissen, Mark, & Chiang, T.-C. Topological limit of ultrathin quasi-free-standing Bi2Te3 films grown on Si(111). United States. doi:10.1103/PhysRevB.85.195442.
Liu, Yang, Bian, Guang, Miller, T., Bissen, Mark, and Chiang, T.-C. Tue . "Topological limit of ultrathin quasi-free-standing Bi2Te3 films grown on Si(111)". United States. doi:10.1103/PhysRevB.85.195442.
@article{osti_1104091,
title = {Topological limit of ultrathin quasi-free-standing Bi2Te3 films grown on Si(111)},
author = {Liu, Yang and Bian, Guang and Miller, T. and Bissen, Mark and Chiang, T.-C.},
abstractNote = {},
doi = {10.1103/PhysRevB.85.195442},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 19,
volume = 85,
place = {United States},
year = {2012},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.85.195442

Citation Metrics:
Cited by: 14 works
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