Topological limit of ultrathin quasi-free-standing Bi2Te3 films grown on Si(111)
Journal Article
·
· Physical Review. B, Condensed Matter and Materials Physics
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1104091
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Vol. 85 Journal Issue: 19; ISSN 1098-0121
- Publisher:
- American Physical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 26 works
Citation information provided by
Web of Science
Web of Science
Similar Records
Nucleation and growth dynamics of MBE-grown topological insulator Bi{sub 2}Te{sub 3} films on Si (111)
Domain formation due to surface steps in topological insulator Bi{sub 2}Te{sub 3} thin films grown on Si (111) by molecular beam epitaxy
Structural properties of Bi{sub 2}Te{sub 3} topological insulator thin films grown by molecular beam epitaxy on (111) BaF{sub 2} substrates
Journal Article
·
Wed Dec 04 00:00:00 EST 2013
· AIP Conference Proceedings
·
OSTI ID:1104091
+2 more
Domain formation due to surface steps in topological insulator Bi{sub 2}Te{sub 3} thin films grown on Si (111) by molecular beam epitaxy
Journal Article
·
Mon Aug 19 00:00:00 EDT 2013
· Applied Physics Letters
·
OSTI ID:1104091
+2 more
Structural properties of Bi{sub 2}Te{sub 3} topological insulator thin films grown by molecular beam epitaxy on (111) BaF{sub 2} substrates
Journal Article
·
Thu Apr 28 00:00:00 EDT 2016
· Journal of Applied Physics
·
OSTI ID:1104091